isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1180
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 110V (Min) ·Low collector saturation voltage ·With TO-126 package ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in audio and radio frequency power amplifiers...
