2SD1160

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SD1160 Switching Applications Suitable for Motor Drive Applications 2SD1160 Unit: mm High DC current gain Low saturation voltage: VCE (sat) = 0.6 V (max) (IC = 2A, IB = 40 mA) Built-in free wheel diode Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 6 V Collector current DC IC 2 A Pulse ICP 4 Diode forward surge current (t = 1 s) IFP 1A Collector power dissipation Ta = 25°C Tc = 25°C PC 1 W 10 Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEDEC JEITA ― ― Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in TOSHIBA 2-7B1A Weight: 0.36 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Equivalent Circuit BASE COLLECTOR ≈ 800 Ω EMITTER 1 2006-11-21 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition ...