2SD1136
Silicon NPN Triple Diffused
Application
Power switching TV horizontal deflection output
Outline
TO-220AB
1 23
...
2SD1136
Silicon NPN Triple Diffused
Application
Power switching TV horizontal deflection output
Outline
TO-220AB
1 23
1. Base 2. Collector
(Flange) 3. Emitter
2SD1136
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Collector current Collector peak current Collector surge current Collector power dissipation
Junction temperature Storage temperature Note: 1. Value at TC = 25°C.
Symbol VCBO VCEO VEBO IC IC(peak) IC(surge) PC PC*1 Tj Tstg
Ratings 200 80 5 4 5 15 1.8 30 150 –45 to +150
Unit V V V A A A W W °C °C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Collector to base breakdown V(BR)CBO
voltage
200
Collector to emitter breakdown V(BR)CEO
voltage
80
Emitter to base breakdown
voltage
V(BR)EBO
5
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
ICES hFE VCE(sat)
— 20 —
Base to emitter saturation
voltage
VBE(sat)
—
Fall time Note: 1. Pulse test.
tf —
Typ —
—
—
— — —
—
—
Max —
—
—
1.0 — 1.5
1.5
1.0
Unit V
Test conditions IC = 1 mA, IE = 0
V IC = 10 mA, RBE = ∞
V IE = 1 mA, IC = 0
mA VCE = 150 V, RBE = 0 VCE = 5 V, IC = 4 A*1
V IC = 4 A, IB = 0.4 A*1
V IC = 4 A, IB = 0.4 A*1
µs IC = 3.5 A, IB1 = 0.45 A, LB = 0
2
DC current transfer ratio hFE
Collector current IC (A)
Collector power dissipation Pc (W)
Collector current IC (A)
Maximum Collector Dissipation Curve 40
30
20
10
0 50 100 150 200 Case temperature TC (°C) Area ...