2SD1134

2SD1133, 2SD1134 Silicon NPN Triple Diffused Application Low frequency power amplifier complementary pair with 2SB857 and 2SB858 Outline TO-220AB 1 2 3 1. Base 2. Collector (Flange) 3. Emitter Absolute Maximum Ratings (Ta = 25°C) Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg 1 2SD1133 70 50 5 4 8 40 150 –45 to +150 2SD1134 70 60 5 4 8 40 150 –45 to +150 Unit V V V A A W °C °C 2SD1133, 2SD1134 Electrical Characteristics (Ta = 25°C) 2SD1133 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO 1 2SD1134 Max — — — 1 320 — 1 1 — Min 70 60 5 — 60 35 — — — Typ — — — — — — — — 7 Max — — — 1 320 — 1 1 — V V MHz Unit V V V µA Test conditions I C = 10 µA, IE = 0 I C = 50 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 50 V, IE = 0 VCE = 4V I C = 1 A*2 I C = 0.1 A*2 I C = 2 A, IB = 0.2 A*2 VCE = 4 V, IC = 1 A*2 VCE = 4 V, IC = 0.5 A*2 Min 70 50 5 — 60 35 — — — Typ — — — — — — — — 7 DC current transfer ratio hFE1* hFE2 Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product VCE(sat) VBE fT Notes: 1. The 2SD1133 and 2SD1134 are grouped by h FE1 as follows. 2. Pulse test. B 60 to 120 C 100 to 200 D 160...