2SD1128

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1128 DESCRIPTION ·Excellent linearity in hFE ·High DC Current Gain ·High Reliability ·Excellent Safe Operating Area ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Color & B/W TV power ·supply Active power filter ·Industrial use power supply (series regulator) ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.5 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 4.1 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1128 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector- Base Breakdown Voltage IC= 1mA ; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 50mA VBE(sat) Base-Emitter Saturation Voltage IC= 1.5A; IB= 50mA ICBO Collector Cutoff Current VCB= 1...