isc Silicon NPN Power Transistor
2SD1118
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 50V(Min) ·High ...
isc Silicon NPN Power Transistor
2SD1118
DESCRIPTION ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= 50V(Min) ·High DC Current Gain-
: hFE= 300V(Min.) @IC= 1A ·Low Collector Saturation
Voltage ·High Reliability ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching regulators ·DC-DC converter ·Solid sate relay ·General purpose power
amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
80
V
VCEO
Collector-Emitter
Voltage
50
V
VEBO
Emitter-Base
Voltage
15
V
IC
Collector Current-Continuous
10
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
3
A
50
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
isc website：www.iscsemi.com
MAX UNIT
2.5
℃/W
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
2SD1118
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown
Voltage IC= 10mA; IB= 0
V(BR)CBO Collector-Base Breakdown
Voltage
IC= 0.1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown
Voltage
IE= 0.1mA; IC= 0
VCE(sat) Collector-Emitter Saturation
Voltage IC= 2A; IB= 0.1A
VB E(sat) Base-Emitter Saturation
Voltage
IC= 2A; IB= 0.1A
ICBO
Collector Cutoff Current
VCB= 80V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 15V; IC...
