2SD1113

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1113 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 300V(Min) ·High DC Current Gain : hFE= 500(Min) @IC= 4A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Igniter ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1113 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 V(BR)CBO Collector - Base Breakdown Voltage Ic = 0.1 mA, Ie = 0 VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 40mA VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 40mA ICEO Collector Cutoff Current VCB= 300V; Rbe = ∞ hFE DC Current Gain IC= 4A; VCE= 2V Switching Times ton Turn-On Time Toff Turn-On Time IC= 4A; IB1= IB2= 40mA; MIN TYP. MAX UNIT 6 V 300 V 300 V 1.5 V 2.0 V 0.1 mA 500 2.0 μs 23 μs ...