SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1073
www.datasheet4u.com
DESCRIPTION ...
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1073
www.datasheet4u.com
DESCRIPTION ·With TO-220 package ·High DC current gain ·DARLINGTON ·Low saturation
voltage APPLICATIONS ·Audio power
amplifiers ·Relay and solenoid drivers ·Motor controls ·General purpose power
amplifiers
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
Absolute maximum ratings (Ta=25 )
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Collector current-continuous Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 300 250 30 4 0.3 60 150 -55~150 UNIT V V V A A W
THERMAL CHARACTERISTICS
SYMBOL R:jc CHARACTERISTICS Thermal resistance junction to case MAX 2.0 UNIT /W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN
www.datasheet4u.com
2SD1073
SYMBOL
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown
voltage
IC=10mA ; IB=0
300
V
V(BR)CBO
Collector-base breakdown
voltage
IC=0.1mA ; IE=0
250
V
V(BR)EBO
Emitter-base breakdown
voltage
IE=10mA ; IC=0
30
V
VCEsat
Collector-emitter saturation
voltage
IC=1A;IB=10mA
1.5
V
VBEsat
Base-emitter saturation
voltage
IC=1A;IB=10mA
2.0
V
ICBO
Collector cut-off current
VCB=300V; IE=0
0.1
mA
IEBO
Emitter cut-off c...