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2SD1071 Datasheet

Part Number 2SD1071
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description Silicon NPN Transistor
Datasheet 2SD1071 Datasheet2SD1071 Datasheet (PDF)

isc Silicon NPN Darlington Power Transistor 2SD1071 DESCRIPTION ·Low Collector Saturation Voltage ·High DC Current Gain ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio power amplifiers ·Relay & solenoid drivers ·Motor controls ·General purpose power amplifiers ·Including zener diode ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 450 V VCEO(SUS) Collector-Emitter Voltag.

  2SD1071   2SD1071






Part Number 2SD1071
Manufacturers Unisonic Technologies
Logo Unisonic Technologies
Description NPN EPITAXIAL SILICON TRANSISTOR
Datasheet 2SD1071 Datasheet2SD1071 Datasheet (PDF)

UNISONIC TECHNOLOGIES CO., LTD 2SD1071 Preliminary NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE POWER AMPLIFIER  DESCRIPTION The UTC 2SD1071 is a high voltage power amplifier, it uses UTC advanced technology to provide the customers high DC current gain and low saturation voltage, etc. The UTC 2SD1071 is suitable for general purpose power amplifier and Motor controls, etc.  FEATURES * Low saturation voltage * High DC current gain  EQUIVALENT CIRCUIT C Z-Di B Diode RBE1 RBE2 E  ORDER.

  2SD1071   2SD1071







Part Number 2SD1071
Manufacturers Fuji
Logo Fuji
Description POWER TRANSISTOR
Datasheet 2SD1071 Datasheet2SD1071 Datasheet (PDF)

2SD1071 TRIPLE DIFFUSED PLANER TYPE ULTRA HIGH β TRANSISTOR HIGH VOLTAGE POWER AMPLIFIER FUJI POWER TRANSISTOR Features High D.C. current gain Low saturation voltage High reliability Applications Audio power amplifiers Relay & solenoid drivers Motor controls General purpose power amplifiers Including zener diode Outline Drawings TO-220AB JEDEC EIAJ 1 : Base 2 : Collector 3 : Emitter TO-220AB SC-46 Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C unless otherwise specif.

  2SD1071   2SD1071







Silicon NPN Transistor

isc Silicon NPN Darlington Power Transistor 2SD1071 DESCRIPTION ·Low Collector Saturation Voltage ·High DC Current Gain ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio power amplifiers ·Relay & solenoid drivers ·Motor controls ·General purpose power amplifiers ·Including zener diode ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 450 V VCEO(SUS) Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 6 V VZ Zener Voltage 300 V IC Collector Current-Continuous 6 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2.5 A 40 W 150 ℃ Tstg Storage Temperature Range -40~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.0 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VZ Zener Voltage IZ= 0.1mA V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 15mA VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 15mA ICBO Collector Cutoff Current VCB= 300V; IE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC=0 hFE DC Current Gain IC= 4A; VCE= 2V 2SD1071 MIN TYP. MAX UNIT 300 450 V 6 V 1.5 V 2.0 V .


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