2SD1062

2SB826 / 2SD1062 Ordering number : EN723I 2SB826 / 2SD1062 PNP / NPN Epitaxial Planar Silicon Transistors 50V / 12A Switching Applications Applications Relay drivers, high-speed inverters, converters, and other general high-current switching applications. Features Low-saturation collector-to-emitter voltage : VCE(sat)= --0.5V(PNP), 0.4V(NPN) max. Wide ASO leading to high resistance to breakdown. Specifications ( ) : 2SB826 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C Electrical Characteristics at Ta=25°C Conditions Parameter Collector Cutoff Current Emitter Cutoff Current Symbol ICBO IEBO Conditions VCB=(--)40V, IE=0A VEB=(--)4V, IC=0A Ratings (--)60 (--)50 (--)6 (--)12 (--)15 1.75 40 150 --55 to +150 Unit V V V A A W W °C °C Ratings min typ max Unit (--)0.1 mA (--)0.1 mA Continued on next page. © 2011, SCILLC. All rights reserved. Jan-2011, Rev. 0 Rev.0 I Pwagwew1.oofn4seImwiw.cwo.omnsemi.com Publication Order Number: 2SB826_2SD1062/D 2SB826 / 2SD1062 Continued from preceding page. Parameter DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time S...