isc
Silicon NPN
Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= 50V(Min) ·Low Collector-Emitter Saturation
Voltage-
: VCE(sat)= 0.4V(Max) @IC= 4.0A ·Complement to Type 2SB825 ·Wide Area of Safe Operation ·Minimum Lot-t...