2SD1037

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1037 www.datasheet4u.com DESCRIPTION ·With MT-200 package ·Excellent safe operating area ·High current capability APPLICATIONS ·For electrical supply ,DC-DC converters and low frequency power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION Absolute maximum ratings (Ta=25°C) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 150 120 6 30 180 150 -55~150 UNIT V V V A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=50mA; IB=0 IC=10 A;IB=1 A IC=10 A;IB=1 A VCB=80V; IE=0 VEB=6V; IC=0 IC=10A ; VCE=4V IC=1A ; VCE=4V IE=0; VCB=10V;f=1MHz 20 MIN 120 www.datasheet4u.com 2SD1037 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE fT COB TYP. MAX UNIT V 0.5 1.5 5 5 V V µA µA 1.5 210 MHz pF 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE...