Transistor
2SD1030
Silicon NPN epitaxial planer type
For low-frequency amplification
Unit: mm
2.8 –0.3
+0.2
s Featur...
Transistor
2SD1030
Silicon NPN epitaxial planer type
For low-frequency amplification
Unit: mm
2.8 –0.3
+0.2
s Features
q q q q q
0.65±0.15
+0.25 1.5 –0.05
0.65±0.15
+0.2 1.1 –0.1
s Absolute Maximum Ratings
Parameter Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
(Ta=25˚C)
Ratings 50 40 15 100 50 200 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C
1:Base 2:Emitter 3:Collector
JEDEC:TO–236 EIAJ:SC–59 Mini Type Package
Marking symbol : 1Z
s Electrical Characteristics
Parameter Collector cutoff current Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Forward current transfer ratio Collector to emitter saturation
voltage Transition frequency
(Ta=25˚C)
Symbol ICBO ICEO VCBO VCEO VEBO hFE fT
*
Conditions VCB = 20V, IE = 0 VCE = 20V, IB = 0 IC = 10µA, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCE = 10V, IC = 2mA IC = 10mA, IB = 1mA VCB = 10V, IE = –2mA, f = 200MHz
min
typ
0 to 0.1
0.1 to 0.3 0.4±0.2
0.8
max 100 1
0.16 –0.06
High foward current transfer ratio hFE. Low collector to emitter saturation
voltage VCE(sat). High emitter to base
voltage VEBO. Low noise
voltage NV. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
0.95
2.9 –0.05
1
1.9±0.2
+0.2
0.95
3
0.4 –0.05
+0.1
...