2SD0874A

www.DataSheet4U.net Transistors 2SD0874, 2SD0874A (2SD874, 2SD874A) Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0766 (2SB766) and 2SB0766A (2SB766A) ■ Features Large collector power dissipation PC Low collector-emitter saturation voltage VCE(sat) Mini power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing 1 4.5±0.1 1.6±0.2 1.5±0.1 Unit: mm 4.0+0.25 –0.20 2.5±0.1 3˚ ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) 2SD0874 2SD0874A VCEO VEBO IC ICP * 1.0+0.1 –0.2 0.4±0.08 1.5±0.1 3 2 0.5±0.08 0.4±0.04 Symbol VCBO Rating 30 60 25 50 5 1 1.5 1 150 −55 to +150 Unit V 3˚ 0.4 max. 2.6±0.1 45˚ Collector-emitter voltage 2SD0874 (Base open) 2SD0874A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature V 3.0±0.15 V A A W °C °C 1: Base 2: Collector 3: Emitter MiniP3-F1 Package PC Tj Tstg Marking Symbol: 2SD0874: Z 2SD0874A: Y Note) *: Printed circuit board: Copper foil area of 1 cm2 or more, and the board thickness of 1.7 mm for the collector portion ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) 2SD0874 2SD0874A 2SD0874 2SD0874A VEBO ICBO hFE1 *2 hFE2 Collector-emitter saturation voltage *1 Base-emitter saturation voltag...