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Transistors
2SD0662, 2SD0662B (2SD662, 2SD662B)
Silicon NPN epitaxial planar type
For high breakdo...
www.DataSheet4U.net
Transistors
2SD0662, 2SD0662B (2SD662, 2SD662B)
Silicon NPN epitaxial planar type
For high breakdown
voltage general amplification
6.9±0.1 2.5±0.1 (1.0)
Unit: mm
(0.4)
(1.5)
2.0±0.2
High collector-emitter
voltage (Base open) VCEO High transition frequency fT M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.
3.5±0.1
(1.0) 2.4±0.2
0.45±0.05 1
■ Features
(1.5)
R 0.9 R 0.7
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base
voltage (Emitter open) 2SD0662 2SD0662B VCEO VEBO IC PC Tj Tstg Symbol VCBO Rating 250 400 200 400 5 70 600 150 −55 to +150 V mA mW °C °C V Unit V
1.0±0.1
(0.85)
Collector-emitter
voltage 2SD0662 (Base open) 2SD0662B Emitter-base
voltage (Collector open) Collector current Collector power dissipation Junction temperature Storage temperature
3 (2.5)
2 (2.5)
1.25±0.05
0.55±0.1
1: Base 2: Collector 3: Emitter M-A1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-emitter
voltage (Base open) 2SD0662 2SD0662B VEBO ICEO hFE * VCE(sat) fT Cob IE = 10 µA, IC = 0 VCE = 100 V, IB = 0 VCE = 10 V, IC = 5 mA IC = 50 mA, IB = 5 mA VCB = 10 V, IE = −10 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz 50 10 30 Symbol VCEO Conditions IC = 100 µA, IB = 0 Min 200 400 5 2 220 1.2 V µA V MHz pF Typ Max Unit V
Emitter-base
voltage (Collector open) Collector-emitter cutoff current (Base open) Forward current transfer ratio Collector-em...