Transistors
2SD0602A
Silicon NPN epitaxial planer type
Unit: mm
For general amplification Complementary to 2SB0710A I ...
Transistors
2SD0602A
Silicon NPN epitaxial planer type
Unit: mm
For general amplification Complementary to 2SB0710A I Features
Low collector to emitter saturation
voltage VCE(sat) Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
1
0.40+0.10 –0.05 3
1.50+0.25 –0.05 2.8+0.2 –0.3
0.16+0.10 –0.06
2
(0.65)
(0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 10°
1.1+0.2 –0.1
I Absolute Maximum Ratings Ta = 25°C
Parameter Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating 60 50 5 1 500 200 150 −55 to +150 Unit V V V A mA mW °C °C
1: Base 2: Emitter 3: Collector
0 to 0.1
1.1+0.3 –0.1
JEDEC: TO-236 EIAJ: SC-59 Mini Type Package
Marking Symbol: X
I Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector cutoff current Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Forward current transfer ratio
*1
Symbol ICBO VCBO VCEO VEBO hFE1 hFE2
*2
Conditions VCB = 20 V, IE = 0 IC = 10 µA, IE = 0 IC = 10 mA, IB = 0 IE = 10 µA, IC = 0 VCE = 10 V, IC = 150 mA VCE = 10 V, IC = 500 mA IC = 300 mA, IB = 30 mA VCB = 10 V, IE = −50 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz
Min
Typ
Max 0.1
Unit µA V V V
60 50 5 85 40 0.35 200 6 15 0.6 340
Collector to emitter saturation
voltage *1 Transiti...