2SC752(G)TM
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC752(G)TM
Ultra High Speed Switching Applicat...
2SC752(G)TM
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC752(G)TM
Ultra High Speed Switching Applications Computer, Counter Applications
Unit: mm
· High transition frequency: fT = 400 MHz (typ.) · Low saturation
voltage: VCE (sat) = 0.3 V (max) · High speed switching time: tstg = 15 ns (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB PC Tj Tstg
Rating
40 15 5 200 40 400 125 -55~125
Unit
V V V mA mA mW °C °C
Electrical Characteristics (Ta = 25°C)
Characteristics Collector cut-off current Emitter cut-off current
DC current gain
Collector-emitter saturation
voltage Base-emitter saturation
voltage Transition frequency Collector output capacitance
Symbol
Test Condition
ICBO
VCB = 40 V, IE = 0
IEBO
VEB = 5 V, IC = 0
hFE (1) VCE = 1 V, IC = 10 mA
(N...