2SC732

ST 2SC732 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta=25 ? ) Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Base Current Collector Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IB IC Ptot Tj TS G S P FORM A IS AVAILABLE Value 60 50 5 30 150 400 125 -55 to +125 Unit V V V mA mA mW OC OC РАДИОТЕХ-ТРЕЙД Тел.: (495) 795-0805 Факс: (495) 234-1603 Эл. почта: info@rct.ru Веб: www.rct.ru ® ST 2SC732 Characteristics at Tamb=25 OC Symbol Min. Typ. DC Current Gain at VCE=6V, IC=2mA Base-Emitter Voltage at VCE=6V,IC=2mA Current Gain Group G L Collector Cutoff Current at VCB=60V Emitter Cutoff Current at VEB=5V Collector Saturation Voltage at IC=10mA, IB=1mA Gain Bandwidth Product at VCE=6V, IC=1mA Output Capacitance at VCB=10V, f=1MHz Noise Figure at VCE=6V, IC=0.1mA f=100Hz, RG=10KΩ Noise Figure at VCE=6V, IC=0.1mA f=1KHz, RG=10KΩ hFE hFE VBE ICBO IEBO VCE(sat) fT COB NF(1) NF(2) 200 350 - - - 0.65 150 2 0.5 0.2 G S P FORM A IS AVAILABLE Max. 400 700 0.1 0.1 0.3 - 6 3 Unit V µA µA V MHz pF V V SEMTECH ELECTRONICS LTD. (Subsidiary of Semtech International Holdings Limited, acompany ® listed on the Ho...