Silicon power transistor
2SC6123
γϦίϯɾύϫʔɾτϥϯδελ
ఆ൛ σʔλγʔτ
R07DS0329JJ0100 Rev.1.00
2011.04.15
֓ç ཁ
2SC6123 ɼߴεΠονϯά༻ͱͯ͠։ൃ͞Εͨ VCE(sat)ɼߴ hF...
Description
2SC6123
γϦίϯɾύϫʔɾτϥϯδελ
ఆ൛ σʔλγʔτ
R07DS0329JJ0100 Rev.1.00
2011.04.15
֓ç ཁ
2SC6123 ɼߴεΠονϯά༻ͱͯ͠։ൃ͞Εͨ VCE(sat)ɼߴ hFE ͷ NPN τϥϯδελͰ͢ͷͰɼOAɼ FA ثػͷ DC/DC ίϯόʔλ֤छΞΫνϡΤʔλۦಈճ࿏༻్ʹ࠷దͰ͢ɻ
ಛç
˓ hFE ͕ߴ͘ɼ VCE(sat) ⎯ hFE2 ≥ 200 @VCE = 2.0 V, IC = 1.0 A ⎯ VCE(sat) ≤ 0.5 V @IC = 4.0 A, IB = 0.2 A
˓ ද໘࣮ରԠͱͯ͠ Z λΠϓʹͳΓ·͢
Φʔμใ
Φʔμ໊শ
Ϧʔυใ
ࠝแܗଶ
2SC6123(0)-Z-E1-AZ∗1 Sn-Bi
ΤϯϘεɾςʔϐϯάç 1000p/Ϧʔϧ
2SC6123(0)-Z-E2-AZ∗1 Sn-Bi
ΤϯϘεɾςʔϐϯάç 1000p/Ϧʔϧ
2SC6123(0)-Z-E1-AY∗1 Sn 100%
ΤϯϘεɾςʔϐϯάç 1000p/Ϧʔϧ
2SC6123(0)-Z-E2-AY∗1 Sn 100%
ΤϯϘεɾςʔϐϯάç 1000p/Ϧʔϧ
ʲʳ∗1. Pb ϑϦʔʢ͜ͷ֎෦ϦʔυʹԖΛؚΜͰ͓Γ·ͤΜɻʣ
ύοέʔδ TO-263 (MP-25Z) TO-263 (MP-25Z) TO-263 (MP-25Z) TO-263 (MP-25Z)
ઈର࠷େఆ֨ʢTA = 25ˆʣ
߲
ུ߸
݅
ίϨΫλ – ϕʔεؒిѹ ίϨΫλ – Τϛολؒిѹ
VCBO VCEO
Τϛολ – ϕʔεؒిѹ
VEBO
ίϨΫλిྲྀʢྲྀʣ ίϨΫλిྲྀʢύϧεʣ∗1
IC(DC) IC(pulse)
PW ≤ 300 μs, Duty Cycle ≤ 10 %
ϕʔεిྲྀʢྲྀʣ શଛࣦ 1∗2
IB(DC) PT1
TA = 25°C
શଛࣦ 2
PT2
TC = 25°C
δϟϯΫγϣϯԹ
Tj
อଘԹ
Tstg
ʲʳ∗1. PW ≤ 10 ms, Duty Cycle ≤ 50 %
∗2. ΨϥεΤϙΩγج൘ 1 inch×1 inch×0.8 mmtɼCu ഩ 1 inch×1 inch×70 μm ް
ఆ֨ 100 60 7.0 5.0 10
2.5 1.5 35 150 ʵ55ʙʴ150
୯Ґ V V V A A
A W W °C °C
R07DS0329JJ0100 Rev.1.00 2011.04.15
Page 1 of 5
2SC6123
ిؾతಛੑʢTA = 25°Cɼಛʹࢦఆͷͳ͍͔͗Γʣ
߲ç ç
ུç ߸
ç ç ݅
ίϨΫλ – Τϛολؒిѹ VCEO(SUS) ίϨΫλ – Τϛολؒిѹ VCEX(SUS)
ίϨΫλ͠Όஅిྲྀ
ICBO
IC = 3 A, IB = 0.3 A, L = 1 mH IC = 3 A, IB1 = −IB1 = 0.3 A, VBE(OFF) = −1.5 V, L = 180 μA, Clamped VCB = 60 V, IE = 0
ίϨΫλ͠Όஅిྲྀ
ICER ICEX1
VCE = 60 V, RBE = 50 Ω, TA = 125°C VCE = 60 V, VBE(OFF) = −1.5 V
Τϛολ͠...
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