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2SC6123

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Silicon power transistor

2SC6123 γϦίϯɾύϫʔɾτϥϯδελ ࢑ఆ൛ σʔλγʔτ R07DS0329JJ0100 Rev.1.00 2011.04.15 ֓ç ཁ 2SC6123 ͸ɼߴ଎εΠονϯά༻ͱͯ͠։ൃ͞Εͨ௿ VCE(sat)ɼߴ hF...


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2SC6123

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2SC6123 γϦίϯɾύϫʔɾτϥϯδελ ࢑ఆ൛ σʔλγʔτ R07DS0329JJ0100 Rev.1.00 2011.04.15 ֓ç ཁ 2SC6123 ͸ɼߴ଎εΠονϯά༻ͱͯ͠։ൃ͞Εͨ௿ VCE(sat)ɼߴ hFE ͷ NPN τϥϯδελͰ͢ͷͰɼOAɼ FA ‫ثػ‬౳ͷ DC/DC ίϯόʔλ΍֤छΞΫνϡΤʔλ‫ۦ‬ಈճ࿏༻్ʹ࠷దͰ͢ɻ ಛç ௃ ˓ hFE ͕ߴ͘ɼ௿ VCE(sat) ⎯ hFE2 ≥ 200 @VCE = 2.0 V, IC = 1.0 A ⎯ VCE(sat) ≤ 0.5 V @IC = 4.0 A, IB = 0.2 A ˓ ද໘࣮૷ରԠͱͯ͠ Z λΠϓʹͳΓ·͢ Φʔμ৘ใ Φʔμ໊শ Ϧʔυ৘ใ ࠝแ‫ܗ‬ଶ 2SC6123(0)-Z-E1-AZ∗1 Sn-Bi ΤϯϘεɾςʔϐϯάç 1000p/Ϧʔϧ 2SC6123(0)-Z-E2-AZ∗1 Sn-Bi ΤϯϘεɾςʔϐϯάç 1000p/Ϧʔϧ 2SC6123(0)-Z-E1-AY∗1 Sn 100% ΤϯϘεɾςʔϐϯάç 1000p/Ϧʔϧ 2SC6123(0)-Z-E2-AY∗1 Sn 100% ΤϯϘεɾςʔϐϯάç 1000p/Ϧʔϧ ʲ஫ʳ∗1. Pb ϑϦʔʢ͜ͷ੡඼͸֎෦ϦʔυʹԖΛ‫ؚ‬ΜͰ͓Γ·ͤΜɻʣ ύοέʔδ TO-263 (MP-25Z) TO-263 (MP-25Z) TO-263 (MP-25Z) TO-263 (MP-25Z) ઈର࠷େఆ֨ʢTA = 25ˆʣ ߲໨ ུ߸ ৚݅ ίϨΫλ – ϕʔεؒిѹ ίϨΫλ – Τϛολؒిѹ VCBO VCEO Τϛολ – ϕʔεؒిѹ VEBO ίϨΫλిྲྀʢ௚ྲྀʣ ίϨΫλిྲྀʢύϧεʣ∗1 IC(DC) IC(pulse) PW ≤ 300 μs, Duty Cycle ≤ 10 % ϕʔεిྲྀʢ௚ྲྀʣ શଛࣦ 1∗2 IB(DC) PT1 TA = 25°C શଛࣦ 2 PT2 TC = 25°C δϟϯΫγϣϯԹ౓ Tj อଘԹ౓ Tstg ʲ஫ʳ∗1. PW ≤ 10 ms, Duty Cycle ≤ 50 % ∗2. ΨϥεΤϙΩγ‫ج‬൘ 1 inch×1 inch×0.8 mmtɼCu ഩ 1 inch×1 inch×70 μm ް ఆ֨ 100 60 7.0 5.0 10 2.5 1.5 35 150 ʵ55ʙʴ150 ୯Ґ V V V A A A W W °C °C R07DS0329JJ0100 Rev.1.00 2011.04.15 Page 1 of 5 2SC6123 ి‫ؾ‬తಛੑʢTA = 25°Cɼಛʹࢦఆͷͳ͍͔͗Γʣ ߲ç ç ໨ ུç ߸ ৚ç ç ݅ ίϨΫλ – Τϛολؒిѹ VCEO(SUS) ίϨΫλ – Τϛολؒిѹ VCEX(SUS) ίϨΫλ͠Όஅిྲྀ ICBO IC = 3 A, IB = 0.3 A, L = 1 mH IC = 3 A, IB1 = −IB1 = 0.3 A, VBE(OFF) = −1.5 V, L = 180 μA, Clamped VCB = 60 V, IE = 0 ίϨΫλ͠Όஅిྲྀ ICER ICEX1 VCE = 60 V, RBE = 50 Ω, TA = 125°C VCE = 60 V, VBE(OFF) = −1.5 V Τϛολ͠...




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