isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC6097
DESCRIPTION ·Large current capacitance ·High-speed swi...
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC6097
DESCRIPTION ·Large current capacitance ·High-speed switching ·High allowable power dissipation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers,
inverter
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
VCEO
Collector-Emitter
Voltage
VEBO
Emitter-Base
Voltage
100
V
60
V
6.5
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Peak
IB
Base Current-Continuous
Collector Power Dissipation
@ TC=25℃
PC
Collector Power Dissipation
@Ta=25℃
TJ
Junction Temperature
5
A
0.6
A
15 W
0.8
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC6097
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat)-1 Collector-Emitter Saturation
Voltage IC= 1A; IB= 50mA
VCE(sat)-2 Collector-Emitter Saturation
Voltage IC= 1A; IB= 100mA
VBE(sat) Base-Emitter Saturation
Voltage
IC= 1A; IB= 100mA
V(BR)CEO Collector-Emitter Breakdown
Voltage IC= 1mA; IB= 0
V(BR)EBO Emitter-Base Breakdown
Voltage
IE= 10uA; IC= 0
ICBO
Collector Cutoff Current
VCB= 50V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
hFE
DC Current Gain
IC= 0.1A; VCE= 2V
COB
Outp...