2SC6077

2SC6077 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6077 ○ Power Amplifier Applications ○ Power Switching Applications Low collector saturation voltage: VCE (sat) = 0.5 V (max)（IC = 1A） High-speed switching: tstg = 0.4 μs (typ) Unit: mm www.DataSheet4U.com Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol VCBO VCEX VCEO VEBO DC Pulse IC ICP IB PC Tj Tstg Rating 160 160 80 9 3.0 5.0 1.0 1.8 150 −55～150 Unit V V V V A A A W °C °C 1 : BASE 2 : COLLECTOR（HEAT SINK） 3 : EMITTER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range JEDEC JEITA TOSHIBA Weight:1.5g(typ) － － 2-10T1A Electrical Characteristics (Ta = 25°C) Characteristic Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Symbol ICBO IEBO V (BR) CEO hFE (1) DC current gain hFE (2) hFE (3) Collector emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Rise time VCE (sat) (1) VCE (sat) (2) VBE (sat) fT Cob tr IB1 Test Conditions VCB = 160 V, IE = 0 VEB = 9 V, IC = 0 IC = 10 mA, IB = 0 VCE = 2 V, IC = 1 mA VCE = 2 V, IC = 0.5 A VCE = 2 V, IC = 1 A IC = 0.5 A, IB = 50 mA IC = 1 A, IB = 100 mA IC = 1 A, IB = 100 mA VCE = 2 V, IC = 0.5 A VCB = 10 V, IE = 0,f = 1MHZ 20 μs IB1 IB2 Output 24 Ω Min － － 80 150 180 100 － － － － － － Typ. － － － － － － － － － 150 14 0.05 Max 1.0 1.0 － － 450...