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2SC6076
NPN Transistor
Description
isc Silicon NPN Power Transistor 2SC6076 DESCRIPTION ·Collector-Emitter Breakdown
Voltage
- : V(BR)CEO= 160V(Min) ·Low Collector-Emitter Saturation
Voltage
- : VCE(sat)=0.5V(Max) @IC= 1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power Amplifier Applications ·Power Switching Applications ABSOLUTE MAXIM...
INCHANGE
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2SC6076
Silicon NPN Transistor
- Toshiba Semiconductor
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