2SC6026

2SC6026 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6026 General-Purpose Amplifier Applications www.DataSheet4U.com Unit: mm 0.15±0.05 High voltage and high current : VCEO = 50 V, IC = 100 mA (max) Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) 0.6±0.05 0.35±0.05 High hFE Lead (Pb) free : hFE = 120~400 Complementary to 2SA2154 1 3 2 0.8±0.05 1.0±0.05 0.1±0.05 Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 60 50 5 100 30 50 150 −55~150 Unit V V V mA mA mW °C °C 0.48 -0.04 +0.02 0.1±0.05 fSM JEDEC JEITA TOSHIBA 1.BASE 2.EMITTER 3.COLLECTOR ― ― 2-1E1A Weight: 0.0006 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristic Collector cutoff current Emitter cutoff current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO IEBO hFE (Note) VCE (sat) fT Cob Test Condition VCB = 60 V, IE = 0 VEB = 5 V, IC = 0 VCE = 6 V, IC = 2 mA IC = 100 mA, IB = 10 mA VCE = 10 V, IC = 1 mA VCB = 10 V, IE = 0, f = 1 MHz Min ⎯ ⎯ 120 ⎯ 60 ⎯ Typ. ⎯ ⎯ ⎯ 0.1 ⎯ 0.95 Max 0.1 0.1 400 0.25 ⎯ ⎯ Unit µA µA ⎯ V MHz pF Note: hFE classification Y (F): 120~240, GR (H): 200~400 ( ) marking symbol Marking Type Name hFE Rank 7F 1 2005-03-23 0.2±0.05 2SC6026 I...