DatasheetsPDF.com

2SC6025 Datasheet

Part Number 2SC6025
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description NPN Epitaxial Planar Silicon Transistor
Datasheet 2SC6025 Datasheet2SC6025 Datasheet (PDF)

Ordering number : ENN8144 2SC6025 NPN Epitaxial Planar Silicon Transistor 2SC6025 www.DataSheet4U.com Features • • UHF to C Band Low-Noise Amplifier and OSC Applications NF=1.2dB typ (f=2GHz). fT=14GHz typ (VCE=1V). fT=21GHz typ (VCE=3V). S21e2=12.5dB typ (f=2GHz). • • Low-noise use : High cut-off frequency : : Low operating voltage. High gain : Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Col.

  2SC6025   2SC6025






Part Number 2SC6026MFV
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon NPN Transistor
Datasheet 2SC6025 Datasheet2SC6026MFV Datasheet (PDF)

2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6026MFV General-Purpose Amplifier Applications • High voltage and high current : VCEO = 50 V, IC = 150 mA (max) • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE : hFE = 120 to 400 • Complementary to 2SA2154MFV Absolute Maximum Ratings (Ta = 25°C) 1.2 ± 0.05 0.8 ± 0.05 0.4 0.4 0.22 ± 0.05 1.2 ± 0.05 0.80 ± 0.05 Unit: mm 0.32 ± 0.05 1 1 3 2 0.13 ± 0.05 Characteristic Sym.

  2SC6025   2SC6025







Part Number 2SC6026CT
Manufacturers Toshiba
Logo Toshiba
Description Silicon NPN Transistor
Datasheet 2SC6025 Datasheet2SC6026CT Datasheet (PDF)

2SC6026CT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC6026CT General Purpose Amplifier Applications  High voltage and high current : VCEO = 50V, IC = 100mA (max)  Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA)= 0.95 (typ.)  High hFE : hFE = 120 to 400  Complementary to 2SA2154CT Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base.

  2SC6025   2SC6025







Part Number 2SC6026
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon NPN Transistor
Datasheet 2SC6025 Datasheet2SC6026 Datasheet (PDF)

2SC6026 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6026 General-Purpose Amplifier Applications • • • • • www.DataSheet4U.com Unit: mm 0.15±0.05 High voltage and high current : VCEO = 50 V, IC = 100 mA (max) Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) 0.6±0.05 0.35±0.05 High hFE Lead (Pb) free : hFE = 120~400 Complementary to 2SA2154 1 3 2 0.8±0.05 1.0±0.05 0.1±0.05 Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collect.

  2SC6025   2SC6025







Part Number 2SC6024
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description NPN Transistor
Datasheet 2SC6025 Datasheet2SC6024 Datasheet (PDF)

Ordering number : ENN8290 2SC6024 NPN Epitaxial Planar Silicon Transistor 2SC6024 Features • • UHF to C Band Low-Noise Amplifier and OSC Applications • • • Low-noise use : NF=1.2dB typ (f=2GHz). High cut-off frequency : fT=14GHz typ (VCE=1V). : fT=21GHz typ (VCE=3V). Low operating voltage. High gain : S21e2=12.5dB typ (f=2GHz). Ultraminiature and thin flat leadless package (1.4mm!0.8mm!0.6mm). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collect.

  2SC6025   2SC6025







NPN Epitaxial Planar Silicon Transistor

Ordering number : ENN8144 2SC6025 NPN Epitaxial Planar Silicon Transistor 2SC6025 www.DataSheet4U.com Features • • UHF to C Band Low-Noise Amplifier and OSC Applications NF=1.2dB typ (f=2GHz). fT=14GHz typ (VCE=1V). fT=21GHz typ (VCE=3V). S21e2=12.5dB typ (f=2GHz). • • Low-noise use : High cut-off frequency : : Low operating voltage. High gain : Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions Ratings 9 3.5 2 35 120 150 --55 to +150 Unit V V V mA mW °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance Forward Transfer Gain Noise Figure Symbol ICBO IEBO hFE fT1 fT2 Cob Cre 2 S21e 1 2 S21e  2 Conditions VCB=5V, IE=0 VEB=1V, IC=0 VCE=3V, IC=15mA VCE=1V, IC=5mA VCE=3V, IC=15mA VCB=1V, f=1MHz VCB=1V, f=1MHz VCE=1V, IC=5mA, f=2GHz VCE=3V, IC=15mA, f=2GHz VCE=1V, IC=5mA, f=2GHz Ratings min typ max 1.0 1 80 14 18 21 0.55 0.25 9 10.5 12.5 1.2 0.7 160 Unit µA µA GHz GHz pF pF dB dB dB NF Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other appl.


2008-09-09 : SHD830004    SHD830301    SHD834004    SHD850001    SHD850003D    SHD852002    1200AP100    SHD866003    CIU86    CIU98   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)