2SC5939

Transistors 2SC5939 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing Unit: mm ■ Features High transition frequency fT Small collector output capacitance (Common base, input open cir- 0.33+–00..0025 3 0.10+–00..0025 0.15 min. 0.80±0.05 1.20±0.05 5˚ 0.15 min. cuited) Cob and reverse transfer capacitance (Common base) Crb SSS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing 0.23+–00..0025 12 (0.40) (0.40) 0.80±0.05 1.20±0.05 5˚ / ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit e e) Collector-base voltage (Emitter open) VCBO 15 V 0.15 max. c e. d typ Collector-emitter voltage (Base open) VCEO 10 0 to 0.01 0.52±0.03 V n d stag tinue Emitter-base voltage (Collector open) VEBO 3 V a e cle con Collector current IC 50 mA lifecy , dis Collector power dissipation PC 100 mW n u ct ped Junction temperature Tj 125 °C te tin Produ ed ty Storage temperature Tstg −55 to +125 °C 1: Base 2: Emitter 3: Collector SSSMini3-F1 Package Marking Symbol: 1S in n followingefdoudriscontinu ■ Electrical Characteristics Ta = 25°C ± 3°C es plan Parameter Symbol Conditions a o clud pe, Collector-emitter voltage (Base open) c ed in ce ty Emitter-base voltage (Collector open) tinu nan Collector-base cutoff current (Emitter open) M is iscon ainte Forward current transfer ratio e/D e, m hFE ratio Dintenanacnce typ Collector-emitter saturation voltage ...