2SC5916
Transistor
Medium power transistor (30V, 2A)
2SC5916
!Features 1) High speed switching. (Tf : Typ. : 20ns at IC...
2SC5916
Transistor
Medium power transistor (30V, 2A)
2SC5916
!Features 1) High speed switching. (Tf : Typ. : 20ns at IC = 2A) 2) Low saturation
voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 0.1A) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2113 !External dimensions (Units : mm)
TSMT3
0.95 0.95
(1)
2.8 1.6
1.9
0.4
(3)
(2)
2.9 1.0MAX 0.85
0.16
(1) Base (2) Emitter (3) Collector
0.1
0.3
0.6
Each lead has same dimensions
Abbreviated symbol : UY
!Applications Low frequency amplifier High speed switching
!Structure NPN Silicon epitaxial planar transistor
!Packaging specifications
Package Type Code Basic ordering unit (pieces) 2SC5916 Taping TL 3000
!Absolute maximum ratings (Ta=25°C)
Parameter Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Collector current Power dissipation Junction temperature Range of storage temperature
∗1 Pw=10ms ∗2 Each terminal mounted on a recommended land.
Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg
Limits 30 30 6 2 4 500 150 −55~+150
Unit V V V A A mW °C °C
∗1 ∗2
0
0.7
1/3
2SC5916
Transistor
!Electrical characteristics (Ta=25°C)
Parameter Collector−base breakdown
voltage Emitter−base breakdown
voltage Collector cut-off current Emitter cut-off current Collector−emitter staturation
voltage DC current gain Transition frequency Collector output capacitance Turn-on time Storage time Fall time Symbol BVCEO Min. 30 30 6 − − − 120 − − − − − Typ. − − − − − 200 − 250 15 25...
