isc Silicon NPN RF Transistor
INCHANGE Semiconductor
2SC5890
DESCRIPTION ·High Gain Bandwidth Product
fT = 7.8 GHz TYP...
isc Silicon NPN RF Transistor
INCHANGE Semiconductor
2SC5890
DESCRIPTION ·High Gain Bandwidth Product
fT = 7.8 GHz TYP. ·High power gain and low noise figure ;
PG = 12 dB TYP., NF = 1.0 dB typ. @ f = 900 MHz ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in UHF ~ VHF wide band amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base
Voltage
20
V
VCEO Collector-Emitter
Voltage
12
V
VEBO
Emitter-Base
Voltage
1.5
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
75
mA
0.7
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc website：www.iscsemi.cn
1
isc & iscsemi isregistered trademark
isc Silicon NPN RF Transistor
INCHANGE Semiconductor
2SC5890
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CBO Collector-Base Breakdown
Voltage
ICBO
Collector Cutoff Current
ICEO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
hFE
DC Current Gain
fT
Current-Gain—Bandwidth Product
COB
Output Capacitance
Cre
Reverse Transfer Capacitance
︱S21e︱2 Insertion Power Gain
PG
Power Gain
NF
Noise Figure
CONDITIONS IC= 10μA ; IE= 0 VCB= 12V; IE= 0 VCE= 9V; RBE= ∞ VEB= 1.5V; IC= 0 IC= 20mA ; VCE= 5V IC= 30mA ; VCE= 5V ;f= 1 GHz IE= 0 ; VCB= 5V;f= 1.0MHz IE= 0 ; VCB= 5V;f= 1.0MHz IC= 30mA ; VCE= 5V;f= 1GHz IC= 30mA ; VCC= 5V;f= 900MHz IC= ...
