Power Transistors
2SC5884
Silicon NPN triple diffusion mesa type
Horizontal deflection output for TV
Unit: mm
3.0±0.2...
Power Transistors
2SC5884
Silicon NPN triple diffusion mesa type
Horizontal deflection output for TV
Unit: mm
3.0±0.2
■ Features
9.9±0.3
4.6±0.2 2.9±0.2
15.0±0.3 8.0±0.2 1.0±0.1
High breakdown
voltage: VCBO ≥ 1 500 V Wide safe operation area
φ3.2±0.1
Built-in dumper diode
■ Absolute Maximum Ratings TC = 25°C
/ Parameter
Symbol Rating
Unit
13.7-+00..25 2.0±0.2 4.1±0.2
Solder Dip
0.76±0.06 1.45±0.15
1.2±0.15
0.75±0.1
1.25±0.1 2.6±0.1
0.7±0.1
e Collector-base
voltage (Emitter open) VCBO
1 500
V
pe) Collector-emitter
voltage (E-B short) VCES
1 500
V
nc d ge. ed ty Emitter-base
voltage (Collector open) VEBO
5
V
sta tinu Base current
IB
2
A
a e cycle iscon Collector current
IC
4
A
life d, d Peak collector current *
ICP
6
A
n u duct type Collector power dissipation
PC
30
W
te tin Pro ed Ta=25°C
2
four ntinu Junction temperature
Tj
150
°C
ing isco Storage temperature
Tstg −55 to +150 °C
ain oncludes fpoell,opwlaned d Note) *: Non-repetitive peak collector current
2.54±0.2 5.08±0.4
7° 1 2 3
1: Base 2: Collector 3: Emitter TO-220H Package
Marking Symbol: C5884
Internal Connection C
B
E
M isccontinueindteinnance ty ■ Electrical Characteristics TC = 25°C ± 3°C
/Dis ma Parameter
Symbol
Conditions
D ance type, Emitter-base
voltage (Collector open)
ten ce Forward
voltage Main tenan Collector-base cutoff current (Emitter open) d main Forward current transfer ratio (plane Collector-emitter saturation
voltage
VEBO VF ICBO
hFE...