2SC5880

2SC5880 Transistors Power transistor (60V, 2A) 2SC5880 zFeatures 1) High speed switching. (Tf : Typ. : 35ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 100mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2093 zExternal dimensions (Unit : mm) ATV 6.8 2.5 0.65Max. 1.0 0.5 2.54 2.54 0.9 (1) (2) (3) (1) Emitter (2) Collector (3) Base 1.05 14.5 4.4 0.45 Taping specifications Symbol : C5880 zApplications Low frequency amplifier High speed switching zStructure NPN Silicon epitaxial planar transistor zPackaging specifications Package Type Taping TV2 2500 Code Basic ordering unit (pieces) 2SC5880 zAbsolute maximum ratings (Ta=25°C) Parameter Symbol VCBO VCEO VEBO DC IC ICP PC Limits 60 60 6 2 4 1.0 150 −55 to 150 Unit V V V A A W °C °C ∗ Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature ∗Pw=10ms Pulsed Tj Tstg Rev.A 1/3 2SC5880 Transistors zElectrical characteristics (Ta=25°C) Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol BVCEO BVCBO BVEBO ICBO IEBO Min. 60 60 6 − − Typ. − − − − − Max. − − − 1.0 1.0 Unit V V V µA µA Condition IC=1mA IC=100µA IE=100µA VCB=40V VEB=4V IC=1.0A IB=0.1A VCE=2V IC=100mA VCE=10V IE= −100mA f=10MHz VCB=10V IE=0mA f=1MHz IC=2A IB1=20...