2SC5828

2SC5828 Silicon NPN Epitaxial VHF/UHF Wide band amplifier ADE–208–1465(Z) Rev.0 Nov. 2001 Features Super compact package: MFPAK (1.4 x 0.8 x 0.59 mm) Outline MFPAK 3 1 2 1. Emitter 2. Base 3. Collector Note: Marking is “WX–”. 2SC5828 Absolute Maximum Ratings (Ta = 25 °C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 15 5.5 1.5 80 80 150 −55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25 °C) Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Symbol V(BR)CBO ICBO ICEO IEBO hFE Cob fT PG NF Min 15    100  2.5 11  Typ     120 0.85 5.5 14 1.0 Max  0.1 1 0.1 150 1.15   1.7 Unit V µA µA µA  pF GHz dB dB Test conditions IC = 10 µA, IE = 0 VCB = 15 V, IE = 0 VCE = 5.5 V, RBE = Infinite VEB = 1.5 V, IC = 0 VCE = 1 V, IC = 5 mA VCB = 1 V, IE = 0, f = 1 MHz VCE = 1 V, IC = 5 mA VCE = 1 V, IC = 5 mA, f = 900 MHz VCE = 1 V, IC = 5 mA, f = 900 MHz Rev.0, Nov. 2001, page 2 of 10 2SC5828 Collector Power Dissipation Curve Collector Power Dissipation PC (mW) Typical Output Characteristics 20 IC (mA) 100 160 µA 140 µA 80 60 16 12 120 µA 100 µA Collector Current 80 µA 60 µA 40 8 40 µA 20 4 IB = 20 µA 0 50 ...