2SC5773

2SC5773 Silicon NPN Epitaxial UHF / VHF wide band amplifier ADE-208-1391(Z) Preliminary 1st. Edition Mar. 2001 Features High gain bandwidth product fT = 10.8 GHz typ. High power gain and low noise figure ; PG = 11.9 dB typ., NF = 1.1 dB typ. at f = 900 MHz Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector Note: Marking is “JR-”. This data sheet contains tentative specification for new product development. It may partially be subject to change without notice. 2SC5773 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Pc Tj Tstg Ratings 15 6 1.5 80 700* 150 –55 to +150 Unit V V V mA mW °C °C * When using aluminium ceramic board (25 x 60 x 0.7 mm) Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Collector output capacitance Symbol V(BR)CBO I CBO I CEO I EBO hFE Cob Min 15 — — — 80 — — 8 — 9 — Typ — — — — 120 1.25 0.98 10.8 11 11.9 1.1 Max — 1 1 10 160 1.8 — — — — 1.9 Unit V µA mA µA V pF pF GHz dB dB dB Test Conditions I C = 10µ A, IE = 0 VCB = 12 V, IE = 0 VCE = 6 V, RBE = ∞ VEB = 1.5 V, IC = 0 VCE = 5 V, IC = 50 mA VCB = 5 V, IE = 0 f = 1 MHz VCB = 5 V, IE = 0 f = 1 MHz VCE = 5 V, IC = 50 mA f = 1 GHz VCE = 5 V, IC = 50 mA f = 1 GHz VCE = 5 V, IC = 50 mA f =...