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2SC5730 Datasheet

Part Number 2SC5730
Manufacturers Rohm
Logo Rohm
Description Medium power transistor
Datasheet 2SC5730 Datasheet2SC5730 Datasheet (PDF)

2SC5730 Transistor Medium power transistor (30V, 1.0A) 2SC5730 !Features 1) High speed switching. (Tf : Typ. : 35ns at IC = 1.0A) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 500mA, IB = 50mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2048 !External dimensions (Units : mm) TSMT3 0.95 0.95 (1) 2.8 1.6 1.9 0.4 (3) (2) 2.9 1.0MAX 0.85 Abbreviated symbol : UM !Applications Small signal low frequency amplifier High speed switching .

  2SC5730   2SC5730






Part Number 2SC5739
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description NPN Transistor
Datasheet 2SC5730 Datasheet2SC5739 Datasheet (PDF)

Power Transistors 2SC5739 Silicon NPN epitaxial planar type Power supply for Audio & Visual equipments such as TVs and VCRs Industrial equipments such as DC-DC converters 9.9±0.3 Unit: mm 4.6±0.2 2.9±0.2 3.0±0.5 φ 3.2±0.1 15.0±0.5 ■ Features • High-speed switching (tstg: storage time/tf: fall time is short) • Low collector-emitter saturation voltage VCE(sat) • Superior forward current transfer ratio hFE linearity • TO-220D built-in: Excellent package with withstand voltage 5 kV / guarante.

  2SC5730   2SC5730







Part Number 2SC5738
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description NPN Transistor
Datasheet 2SC5730 Datasheet2SC5738 Datasheet (PDF)

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5738 High-Speed Switching Applications DC-DC Converter Applications 2SC5738 Unit: mm • High DC current gain: hFE = 400 to 1000 (IC = 0.5 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.15 V (max) • High-speed switching: tf = 90 ns (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector current D.

  2SC5730   2SC5730







Medium power transistor

2SC5730 Transistor Medium power transistor (30V, 1.0A) 2SC5730 !Features 1) High speed switching. (Tf : Typ. : 35ns at IC = 1.0A) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 500mA, IB = 50mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2048 !External dimensions (Units : mm) TSMT3 0.95 0.95 (1) 2.8 1.6 1.9 0.4 (3) (2) 2.9 1.0MAX 0.85 Abbreviated symbol : UM !Applications Small signal low frequency amplifier High speed switching !Structure NPN Silicon epitaxial planar transistor !Packaging specifications Package Type Code Basic ordering unit (pieces) 2SC5730 Taping TL 3000 !Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature ∗1 Pw=10ms ∗2 Each terminal mounted on a recommended land. Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Limits 30 30 6 1 2 500 150 −55~+150 Unit V V V A A mW °C °C ∗1 ∗2 0 (1) Base (2) Emitter (3) Collector 0.16 0.1 0.3 0.6 Each lead has same dimensions 0.7 1/3 2SC5730 Transistor !Electrical characteristics (Ta=25°C) Parameter Collector−base breakdown voltage Emitter−base breakdown voltage Collector cut-off current Emitter cut-off current Collector−emitter staturation voltage DC current gain Transition frequency Collector output capacitance Turn-on time Storage time Fall time Symbol BVCBO Min. 30 30 6 − − − 120 − − − − − Typ. − − − −.


2005-04-03 : STK4110    STK4111    STK4112    4511    4511B    FQ08E    2SC4491    2SC4492    2SC4493    2SC4495   


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