2SC5729
Transistor
Medium power transistor (30V, 0.5A)
2SC5729
zFeatures 1) High speed switching. (Tf : Typ. : 50ns at ...
2SC5729
Transistor
Medium power transistor (30V, 0.5A)
2SC5729
zFeatures 1) High speed switching. (Tf : Typ. : 50ns at IC = 500mA) 2) Low saturation
voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2047 zExternal dimensions (Units : mm)
(1)
0.65 0.65
UMT3
0.3
(3)
1.25 2.1
0.15
0.2
(2)
(1) Emitter (2) Base (3) Collector
0.1Min.
Each lead has same dimensions
Abbreviated symbol : UW
zApplications Small signal low frequency amplifier High speed switching
zStructure NPN Silicon epitaxial planar transistor
zPackaging specifications
Package
Type Taping T106 3000
Code Basic ordering unit (pieces)
2SC5729
zAbsolute maximum ratings (Ta=25°C)
Parameter Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Collector current Power dissipation Junction temperrature Range of storage temperature
∗1 Pw=10ms ∗2 Each terminal mounted on a recommended land.
Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg
Limits 30 30 6 0.5 1.0 200 150 −55 to +150
Unit V V V A A mW °C °C
∗1 ∗2
0.7
0.9
1.3
2.0
Rev.A
1/3
2SC5729
Transistor
zElectrical characteristics (Ta=25°C)
Parameter Collector−base breakdown
voltage
Emitter−base breakdown
voltage
Symbol BVCEO
Min. 30 30 6 − − − 120 − − − − −
Typ. − − − − − 150 − 300 5 40 120 50
Max. − − − 1.0 1.0 300 390 − − − − −
Unit V V V µA µA mV − MHz pF ns ns ns IC=100µA IC=1mA IE=100µA VCB=20V VEB=4V
Conditions
Collector−emitter brea...