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2SC5713 Datasheet

Part Number 2SC5713
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description NPN TRANSISTOR
Datasheet 2SC5713 Datasheet2SC5713 Datasheet (PDF)

2SC5713 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5713 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • • • High DC current gain: hFE = 400 to 1000 (IC = 0.5 A) Low collector-emitter saturation voltage: VCE (sat) = 0.15 V (max) High-speed switching: tf = 50 ns (typ.) Industrial Applications Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector curr.

  2SC5713   2SC5713






Part Number 2SC5717
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description NPN TRANSISTOR
Datasheet 2SC5713 Datasheet2SC5717 Datasheet (PDF)

2SC5717 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5717 Horizontal Deflection Output for Super High Resolution Display, Color TV, Digital TV. High Speed Switching Applications. · · · High voltage: VCBO = 1500 V Low saturation voltage: VCE (sat) = 3 V (max) High speed: tf (2) = 0.1 µs (typ.) Unit: mm Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junctio.

  2SC5713   2SC5713







Part Number 2SC5716
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description NPN TRANSISTOR
Datasheet 2SC5713 Datasheet2SC5716 Datasheet (PDF)

2SC5716 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5716 Horizontal Deflection Output for High Resolution Display, Color TV · · · High voltage: VCBO = 1700 V High speed: tf (2) = 0.2 µs (typ.) Collector metal (fin) is fully covered with mold resin. Unit: mm Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC P.

  2SC5713   2SC5713







Part Number 2SC5714
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description NPN Transistor
Datasheet 2SC5713 Datasheet2SC5714 Datasheet (PDF)

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5714 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications 2SC5714 Unit: mm • High DC current gain: hFE = 400 to 1000 (IC = 0.5 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.15 V (max) • High-speed switching: tf = 90 ns (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-base voltage .

  2SC5713   2SC5713







Part Number 2SC5712
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description NPN Transistor
Datasheet 2SC5713 Datasheet2SC5712 Datasheet (PDF)

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5712 High-Speed Switching Applications DC-DC Converter Applications DC-AC Converter Applications 2SC5712 Unit: mm • High DC current gain: hFE = 400 to 1000 (IC = 0.3 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max) • High-speed switching: tf = 120 ns (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current.

  2SC5713   2SC5713







NPN TRANSISTOR

2SC5713 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5713 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • • • High DC current gain: hFE = 400 to 1000 (IC = 0.5 A) Low collector-emitter saturation voltage: VCE (sat) = 0.15 V (max) High-speed switching: tf = 50 ns (typ.) Industrial Applications Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC t = 10 s DC Pulse Symbol VCBO VCEX VCEO VEBO IC ICP IB PC (Note) Tj Tstg Rating 20 15 10 7 4 7 400 1.0 2.5 150 −55 to 150 Unit V V V V A mA W °C °C JEDEC JEITA TOSHIBA ― SC-62 2-5K1A Weight: 0.05 g (typ.) Note: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 2 645 mm ) Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Collector output capacitance Rise time Switching time Storage time Fall time Symbol ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) Cob tr tstg tf Test Condition VCB = 20 V, IE = 0 VEB = 7 V, IC = 0 IC = 10 mA, IB = 0 VCE = 2 V, IC = 0.5 A VCE = 2 V, IC = 1.6 A IC = 1.6 A, IB = 32 mA IC = 1.6 A, IB = 32 mA VCB = 10 V, IE = 0, f = 1 MHz See Figure 1 circuit diagram. VCC ∼ − 6 V, RL =.


2005-04-03 : STK4110    STK4111    STK4112    4511    4511B    FQ08E    2SC4491    2SC4492    2SC4493    2SC4495   


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