TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5712
High-Speed Switching Applications DC-DC Converter Applications DC-...
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5712
High-Speed Switching Applications DC-DC Converter Applications DC-AC Converter Applications
2SC5712
Unit: mm
High DC current gain: hFE = 400 to 1000 (IC = 0.3 A) Low collector-emitter saturation
voltage: VCE (sat) = 0.14 V (max) High-speed switching: tf = 120 ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base
voltage
Collector-emitter
voltage
Emitter-base
voltage
Collector current
DC Pulse
Base current
Collector power dissipation
DC t = 10 s
Junction temperature
Storage temperature range
VCBO
100
V
VCEX
80
V
VCEO
50
VEBO
7
V
IC
3.0
A
ICP
5.0
IB
0.3
A
PC
1.0
W
(Note 1)
2.5
Tj
150
°C
Tstg
−55 to 150
°C
JEDEC
―
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/
voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/
voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, ...