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2SC5692

Part Number	2SC5692
Manufacturer	Toshiba Semiconductor
Description	NPN Transistor
Published	Apr 3, 2005
Detailed Description	TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5692 High-Speed Switching Applications DC-DC Converter Applications Str...
Datasheet	2SC5692 PDF File

Overview

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5692 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications 2SC5692 Unit: mm • High DC current gain: hFE = 400 to 1000 (IC = 0.
3 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.
14 V (max) • High-speed switching: tf = 120 ns (typ.
) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation DC t = 10 s Junction temperature Storage temperature range VCBO 100 V VCEX 80 V VCEO 50 V VEBO 7 V IC 2.
5 A I...

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