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2SC5682 Datasheet

Part Number 2SC5682
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description NPN Triple Diffused Planar Silicon Transistor
Datasheet 2SC5682 Datasheet2SC5682 Datasheet (PDF)

Ordering number : ENN6608A 2SC5682 NPN Triple Diffused Planar Silicon Transistor 2SC5682 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • Package Dimensions unit : mm 2174A [2SC5682] 16.0 3.4 5.6 3.1 High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process. 5.0 21.0 4.0 22.0 8.0 2.8 2.0 20.4 0.7 0.9 1 2 5.45 3 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PMLH Specifications Ab.

  2SC5682   2SC5682






Part Number 2SC5689
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet 2SC5682 Datasheet2SC5689 Datasheet (PDF)

isc Silicon NPN Power Transistor 2SC5689 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Color TV horizontal deflection output ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 10 A .

  2SC5682   2SC5682







Part Number 2SC5689
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description NPN TRANSISTOR
Datasheet 2SC5682 Datasheet2SC5689 Datasheet (PDF)

Ordering number : ENN6654A 2SC5689 NPN Triple Diffused Planar Silicon Transistor 2SC5689 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • • Package Dimensions unit : mm 2174A [2SC5689] 16.0 5.0 High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. 3.4 5.6 3.1 8.0 22.0 21.0 4.0 2.8 2.0 20.4 0.7 0.9 1 2 5.45 3 3.5 0.8 2.1 1 : Base 2 : Collector 3 : Emitter.

  2SC5682   2SC5682







Part Number 2SC5686
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description NPN Transistor
Datasheet 2SC5682 Datasheet2SC5686 Datasheet (PDF)

Power Transistors 2SC5686 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV, CRT monitor Unit: mm ■ Features 15.5±0.5 φ 3.2±0.1 5˚ 3.0±0.3 5˚ (4.5) 26.5±0.5 (2.0) (1.2) (10.0) (23.4) 22.0±0.5 • High breakdown voltage: VCBO ≥ 2 000 V • High-speed switching: tf < 200 ns • Wide safe operation area 5˚ (4.0) 5˚ 2.0±0.2 5˚ ■ Absolute Maximum Ratings TC = 25°C 1.1±0.1 0.7±0.1 / Parameter Symbol Rating Unit 18.6±0.5 (2.0) Solder Dip 5.45±0.3 e Collector-.

  2SC5682   2SC5682







Part Number 2SC5684
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon NPN Transistor
Datasheet 2SC5682 Datasheet2SC5684 Datasheet (PDF)

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  2SC5682   2SC5682







Part Number 2SC5683
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description NPN TRANSISTOR
Datasheet 2SC5682 Datasheet2SC5683 Datasheet (PDF)

Ordering number : ENN6653A 2SC5683 NPN Triple Diffused Planar Silicon Transistor 2SC5683 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • Package Dimensions unit : mm 2174A [2SC5683] 16.0 5.0 High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process. 3.4 5.6 3.1 8.0 22.0 21.0 4.0 2.8 2.0 20.4 0.7 0.9 1 2 5.45 3 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PMLH Ratings 1500 800 5 2.

  2SC5682   2SC5682







NPN Triple Diffused Planar Silicon Transistor

Ordering number : ENN6608A 2SC5682 NPN Triple Diffused Planar Silicon Transistor 2SC5682 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • Package Dimensions unit : mm 2174A [2SC5682] 16.0 3.4 5.6 3.1 High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process. 5.0 21.0 4.0 22.0 8.0 2.8 2.0 20.4 0.7 0.9 1 2 5.45 3 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PMLH Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C 5.45 Conditions 3.5 0.8 2.1 Ratings 1500 800 5 20 40 3.0 95 150 --55 to +150 Unit V V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Collector Cutoff Current Collector Sustain Voltage Emitter Cutoff Current Symbol ICBO ICES VCEO(sus) IEBO Conditions VCB=800V, IE=0 VCE=1500V, RBE=0 IC=100mA, IB=0 VEB=4V, IC=0 Ratings min typ max 10 1.0 800 1.0 Unit µA mA V mA Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected t.


2005-12-10 : C5682    HOA0875    HOA0861    HOA0862    HOA0866    HOA0871    HOA0876    HOA0867    HOA0872    HOA0877   


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