2SC5646

Ordering number : ENN6606 2SC5646 NPN Epitaxial Planar Silicon Transistor 2SC5646 UHF to S Band Low-Noise Amplifier andOSC Applications Features Package Dimensions unit : mm 2159 [2SC5646] 1.4 Low-noise use : NF=1.5dB typ (f=2GHz). High cut-off frequency : fT=10GHz typ (VCE=1V). : fT=12.5GHz typ (VCE=3V). Low operating voltage. High gain :S21e2=9.5dB typ (f=2GHz). Ultraminiature and thin flat leadless package (1.4mm!0.8mm!0.6mm). 0.3 0.25 0.1 3 0.8 0.2 0.3 1 0.45 2 1.4 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions 0.6 1 : Base 2 : Emitter 3 : Collector SANYO : SSFP Ratings 9 4 2 30 100 150 --55 to +150 Unit V V V mA mW °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance Forward Transfer Gain Noise Figure Symbol ICBO IEBO hFE fT1 fT2 Cob Cre 2 S21e 1 2 S21e 2 Conditions VCB=5V, IE=0 VEB=1V, IC=0 VCE=1V, IC=5mA VCE=1V, IC=5mA VCE=3V, I C=15mA VCB=1V, f=1MHz VCB=1V, f=1MHz VCE=1V, IC=5mA, f=2GHz VCE=3V, IC=15mA, f=2GHz VCE=1V, IC=3mA, f=2GHz Ratings min typ max 1.0 10 100 8 10 12.5 0.55 0.4 8 9.5 10.5 1.5 2.3 0.7 160 Unit µA µA GHz GHz pF pF dB dB dB NF Marking : NF Any and all SANYO pr...