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2SC5628 Datasheet

Part Number 2SC5628
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description NPN TRANSISTOR
Datasheet 2SC5628 Datasheet2SC5628 Datasheet (PDF)

2SC5628 Silicon NPN Epitaxial High Frequency Amplifier / Oscillator ADE-208-979A (Z) 2nd. Edition April 2001 Features • Super compact package; (1.4 × 0.8 × 0.59mm) • High power gain and low noise figure; (PG = 9 dB, NF = 1.1 dB typ, at f = 900 Mhz, VCE = 1 V) Outline MFPAK 3 1 2 1. Emitter 2. Base 3. Collector Note: Marking is “XZ-”. 2SC5628 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector .

  2SC5628   2SC5628






Part Number 2SC5625
Manufacturers ISAHAYA ELECTRONICS
Logo ISAHAYA ELECTRONICS
Description SMALL-SIGNAL TRANSISTOR
Datasheet 2SC5628 Datasheet2SC5625 Datasheet (PDF)

ISAHAYA ELECTRONICS CORPORATION Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making.

  2SC5628   2SC5628







Part Number 2SC5622
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet 2SC5628 Datasheet2SC5622 Datasheet (PDF)

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5622 DESCRIPTION ·High Breakdown Voltage ·High Switching Speed ·Low Saturation Voltage ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Character display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector-Emitter Voltage 1500 V VEBO .

  2SC5628   2SC5628







Part Number 2SC5622
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description NPN Transistor
Datasheet 2SC5628 Datasheet2SC5622 Datasheet (PDF)

Power Transistors 2SC5622 Silicon NPN triple diffusion mesa type For horizontal deflection output 15.5±0.5 φ 3.2±0.1 Unit: mm 3.0±0.3 5˚ 5˚ (4.5) (23.4) 22.0±0.5 26.5±0.5 (2.0) (1.2) (10.0) I Features • High breakdown voltage: 1 500 V • High-speed switching • Wide area of safe operation (ASO) I Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit 5˚ (4.0) 5˚ 2.0±0.2 5˚ 1.1±0.1 0.7±0.1 / Collector to base voltage VCBO 1 500 V 18.6±0.5 (2.0) Solder Dip 5.45±.

  2SC5628   2SC5628







Part Number 2SC5621
Manufacturers ETC
Logo ETC
Description NPN TRANSISTOR
Datasheet 2SC5628 Datasheet2SC5621 Datasheet (PDF)

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  2SC5628   2SC5628







NPN TRANSISTOR

2SC5628 Silicon NPN Epitaxial High Frequency Amplifier / Oscillator ADE-208-979A (Z) 2nd. Edition April 2001 Features • Super compact package; (1.4 × 0.8 × 0.59mm) • High power gain and low noise figure; (PG = 9 dB, NF = 1.1 dB typ, at f = 900 Mhz, VCE = 1 V) Outline MFPAK 3 1 2 1. Emitter 2. Base 3. Collector Note: Marking is “XZ-”. 2SC5628 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Pc Tj Tstg Ratings 15 8 1.5 50 80 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Symbol V(BR)CBO I CBO I CEO I EBO hFE Cob fT PG NF Min 15 — — — 50 — 6 11 — Typ — — — — 100 0.55 9 14 1.1 Max — 1 1 10 160 0.85 — — 2.0 Unit V µA mA µA V pF GHz dB dB Test Conditions I C = 10µA , IE = 0 VCB = 12V , IE = 0 VCE = 8V , RBE = ∞ VEB = 1.5V , IC = 0 VCE = 1V , IC = 5mA VCB = 1V , IE = 0 f = 1MHz VCE = 1V , IC = 5mA VCE = 1V, IC = 5mA f = 900MHz VCE = 1V, IC = 5mA f = 900MHz 2 2SC5628 Main Characteristics Maximum Collector Dissipation Curve Collector Power Dissipation Pc (mW) 200 DC Current Transfer Ratio h FE 200 DC Current Transfer Ratio vs. Collector Current 150 V.


2005-04-03 : STK4110    STK4111    STK4112    4511    4511B    FQ08E    2SC4491    2SC4492    2SC4493    2SC4495   


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