2SC5609

Transistors 2SC5609 Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2021 0.33+–00..0025 Unit: mm 0.10+–00..0025 3 0.15 min. 0.80±0.05 1.20±0.05 ■ Features High forward current transfer ratio hFE 5˚ SSS-Mini type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing ■ Absolute Maximum Ratings Ta = 25°C 0.23+–00..0025 12 (0.40) (0.40) 0.80±0.05 1.20±0.05 5˚ 0.15 min. / Parameter Symbol Rating Unit e ) Collector-base voltage (Emitter open) VCBO 60 V c type Collector-emitter voltage (Base open) VCEO 50 0 to 0.01 0.52±0.03 V n d ge. ed Emitter-base voltage (Collector open) VEBO 7 V le sta ntinu Collector current IC 100 mA a e cyc isco Peak collector current ICP 200 mA life d, d Collector power dissipation PC 100 mW n u duct type Junction temperature Tj 125 °C te tin Pro ued Storage temperature Tstg −55 to +125 °C 1: Base 2: Emitter 3: Collector SSSMini3-F1 Package Marking Symbol: 3F 0.15 max. in n es follopwlianngefdoudriscontin ■ Electrical Characteristics Ta = 25°C ± 3°C a o clud pe, Parameter Symbol Conditions Min Typ Max Unit c ed in ce ty Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 60 V tinu nan Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 V M is iscon ainte Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 7 V e/D e, m Collector-base cutoff current (Emitter open) ICBO VCB = 20 ...