Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC5592
Silicon NPN epitaxial planar type
...
Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC5592
Silicon NPN epitaxial planar type
For DC-DC converter
Unit: mm
For various driver circuits
0.40+–00..0150
0.16+–00..0160
3
■ Features
1.50–+00..0255 2.8–+00..32
Low collector-emitter saturation
voltage VCE(sat)
0.4±0.2
High-speed switching
Mini type package, allowing downsizing of the equipment and
1
2
automatic insertion through the tape packing
(0.95) (0.95)
5˚
(0.65)
1.9±0.1
/ ■ Absolute Maximum Ratings Ta = 25°C
2.90+–00..0250 10˚
e Parameter
Symbol Rating
Unit
c type) Collector-base
voltage (Emitter open) VCBO
15
V
n d ge. ed Collector-emitter
voltage (Base open) VCEO
15
0 to 0.1 1.1–+00..12 1.1–+00..13
V
sta tinu Emitter-base
voltage (Collector open) VEBO
5
V
a e cycle iscon Collector current
IC
2.5
A
life d, d Peak collector current
ICP
10
A
n u duct type Collector power dissipation *
PC
600
mW
te tin Pro ued Junction temperature
Tj
150
°C
four ntin Storage temperature
Tstg −55 to +150 °C
wing disco Note) *: Measure on the ceramic substrate at 15 mm × 15 mm × 0.6 mm
Marking Symbol: 2T
1: Base 2: Emitter 3: Collector Mini3-G1 Package
in n es folloplaned ■ Electrical Characteristics Ta = 25°C ± 3°C
a o clud pe, Parameter
Symbol
Conditions
Min
c ed in ce ty Collector-base
voltage (Emitter open)
tinu nan Collector-emitter
voltage (Base open)
M is iscon ainte Emitter-base
voltage (Collector open)
e/D e, m Collector-base cuto...
