2SC5585
Elektronische Bauelemente
RoHS Compliant Product
NPN Silicon General Purpose Transistor
FEATURES
High Current ...
2SC5585
Elektronische Bauelemente
RoHS Compliant Product
NPN Silicon General Purpose Transistor
FEATURES
High Current Low VCE(sat) - VCE(sat)İ 250mV at IC = 200mA/IB=10mA A
SOT-523 Dim A B C D
S
2 3 Top View 1
Min 1.50 0.78 0.80 0.28 0.90 0.00 0.10 0.35 0.49 1.50
Max 1.70 0.82 0.82 0.32 1.10 0.10 0.20 0.41 0.51 1.70
MARKING CODE
BX
L B
G H
D
3. Collector 2. Base
J K
C J K
G
L S
1. Emitter
H
All Dimension in mm
Maximum Ratings (Ta=25 o C unless otherwise specified)
Parameter Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Collector current (continuous) Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Value 15 12 6 0.5 0.15 -55~+150 -55~+150 Unit V V V A W
o o
C C
Electrical Characteristics (Tamb=25 o C unless otherwise specified)
Parameter Collector-base breakdown
voltage Collector-emitter breakdown
voltage Emitter-base breakdown
voltage Collector cutoff current Emitter cutoff current DC current gain Collector-emitter saturation
voltage
Transition frequency
Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) fT Cob
Min. 15 12 6
Typ.
Max.
Unit V V V μA μA
Conditions IC=10 μA, IE=0 IC=1mA, IB=0 IE=10 μA, IC=0 VCB=15V, IE=0 VEB= 6V, IC=0 VCE=2V, IC=10mA
0.1 0.1 270 680 0.25 320 7.5
V MHz pF
IC=200mA, IB=10mA VCE=2V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1MHz
Collector Output capacitance
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
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