2SC5550

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5550 High-Speed Switching Application for Inverter Lighting System 2SC5550 Unit: mm Suitable for RCC circuit (guaranteed small current hFE) : hFE = 13 (min) (IC = 1 mA) High speed: tr = 0.5 µs (max), tf = 0.3 µs (max) (IC = 0.24 A) High breakdown voltage: VCEO = 400 V Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 400 400 7 1 2 0.5 1.5 10 150 −55 to 150 Unit V V V A A W °C °C JEDEC ― JEITA ― TOSHIBA 2-8H1A Weight: 0.82 g (typ.) 1 2004-07-26 2SC5550 Electrical Characteristics (Tc = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Symbol Test Condition ICBO IEBO V (BR) CBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) VCB = 320 V, IE = 0 VEB = 7 V, IC = 0 IC = 1 mA, IE = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 1 mA VCE = 5 V, IC = 0.04 A IC = 0.2 A, IB = 25 mA IC = 0.2 A, IB = 25 mA Min Typ. Max Unit ― ― 100 µA ― ― 100 µA 400 ― ― V 400 ― ― V 13 ― ― 20 ― 65 ― ― 1.0 V ― ― 1.3 V Rise time Switching time Storage time IB1 IB2 833 Ω tr VCC ≈ 200 V 20 µs IC...