2SC5539

Ordering number:ENN6341 NPN Epitaxial Planar Silicon Transistor 2SC5539 VHF to UHF Low-Noise Wide-Band Amplifier Applications Features · Low noise : NF=1.1dB typ (f=1GHz). · High gain : S21e2=12dB typ (f=1GHz). · High cutoff frequency : fT=7.5GHz typ. · Ultrasmall, slim flat-lead package. (1.4mm × 0.8mm × 0.6mm) Package Dimensions unit:mm 2159 [2SC5539] 1.4 0.3 0.25 3 0.1 0.8 0.2 0.3 1 0.45 2 1.4 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions 1 : Base 2 : Emitter 3 : Collector SANYO : SSFP 0.6 Ratings 20 12 2 100 100 150 –55 to +150 Unit V V V mA mW ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance Forward Transfer Gain Noise Figure Symbol ICBO IEBO hFE fT Cob Cre | S21e |2 NF VCB=10V, IE=0 VEB=1V, IC=0 VCE=5V, IC=30mA VCE=5V, IC=30mA VCB=5V, f=1MHz VCB=5V, f=1MHz VCE=5V, IC=30mA, f=1GHz VCE=5V, IC=7mA, f=1GHz 10 90 6 7.5 0.85 0.6 12 1.1 2.0 1.3 Conditions Ratings min typ max 1.0 10 200 GHz pF pF dB dB Unit µA µA Marking : ND Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as lif...