2SC5538

Ordering number:ENN6291 NPN Epitaxial Planar Silicon Transistor 2SC5538 VHF to UHF OSC, High-Frequency Amplifier Applications Features · High gain : S21e =10.5dB typ (f=1GHz). · High cutoff frequency : fT=5.2GHz typ. · Ultrasmall, slim flat-lead package. (1.4mm×0.8mm×0.6mm) 2 Package Dimensions unit:mm 2159 [2SC5538] 1.4 0.3 0.25 3 0.1 0.8 0.2 0.3 1 0.45 2 1.4 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions 1 : Base 2 : Emitter 3 : Collector SANYO : SSFP 0.6 Ratings 20 10 2 100 100 150 –55 to +150 Unit V V V mA mW ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance Forward Transfer Gain Noise Figure Symbol ICBO IEBO hFE1 hFE2 fT Cob Cre | S21e |2 NF VCB=10V, IE=0 VEB=1V, IC=0 VCE=3V, IC=7mA VCE=3V, IC=30mA VCE=3V, IC=7mA VCB=3V, f=1MHz VCB=3V, f=1MHz VCE=3V, IC=7mA, f=1GHz VCE=3V, IC=7mA, f=1GHz 8 110 100 3 5.2 1.0 0.7 10.5 1.4 2.5 1.5 GHz pF pF dB dB Conditions Ratings min typ max 1.0 10 200 Unit µA µA Marking : NA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support sys...