Ordering number:ENN6279
NPN Epitaxial Planar Silicon Transistor
2SC5502
High-Frequency Low-Noise Amplifier Application...
Ordering number:ENN6279
NPN Epitaxial Planar Silicon Transistor
2SC5502
High-Frequency Low-Noise Amplifier Applications
Features
· Low noise : NF=1.1dB typ (f=1GHz). · High gain : S21e2=12dB typ (f=1GHz). · High cutoff frequency : fT=8GHz typ.
Package Dimensions
unit:mm 2161
[2SC5502]
0.65 0.65 0.3 4 3
0.425
1
2 0.6 0.65 0.5 2.0
0.425
1.25 2.1
0 to 0.1
0.2
0.15
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base
Voltage Collector-to-Emitter
Voltage Emitter-to-Base
Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Mounted on a ceramic board (250mm2× 0.8mm) Conditions
1 : Emitter 2 : Collector 3 : Emitter 4 : Base SANYO : MCP4
0.7 0.9
Ratings 20 12 2 100 500 150 –55 to +150
Unit V V V mA mW ˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Reverse Transfer Capacitance Symbol ICBO IEBO hFE1 hFE2 fT Cre VCB=5V, IE=0 VEB=1V, IC=0 VCE=5V, IC=30mA VCE=5V, IC=70mA VCE=5V, IC=30mA VCB=5V, f=1MHz 90* 80 6 8 0.6 1.0 GHz pF Conditions Ratings min typ max 1.0 10 270* Unit µA µA
* : The 2SC5502 is classified by 30mA hFE as follows :
Marking Rank hFE 4 90 to 180 TY 5 135 to 270
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Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-...