Ordering number:ENN6339
NPN Epitaxial Planar Silicon Transistor
2SC5489
VHF to UHF Low-Noise Wide-Band Amplifier Appli...
Ordering number:ENN6339
NPN Epitaxial Planar Silicon Transistor
2SC5489
VHF to UHF Low-Noise Wide-Band Amplifier Applications
Features
· Low noise : NF=1.2dB typ (f=1GHz). · High gain : S21e2=13dB typ (f=1GHz). · High cutoff frequency : fT=9.0GHz typ. · Ultrasmall, slim flat-lead package. (1.4mm × 0.8mm × 0.6mm)
Package Dimensions
unit:mm 2159
[2SC5489]
1.4
0.3
0.25 3
0.1
0.8
0.2
0.3
1 0.45
2
1.4
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base
Voltage Collector-to-Emitter
Voltage Emitter-to-Base
Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions
1 : Base 2 : Emitter 3 : Collector SANYO : SSFP
0.6
Ratings 16 8 1.5 50 100 150 –55 to +150
Unit V V V mA mW ˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Forward Transfer Gain Noise Figure Symbol ICBO IEBO hFE fT Cob | S21e |2 NF VCB=10V, IE=0 VEB=1V, IC=0 VCE=5V, IC=15mA VCE=5V, IC=15mA VCB=10V, f=1MHz VCE=5V, IC=15mA, f=1GHz VCE=5V, IC=5mA, f=1GHz 10 90 9.0 0.6 13 1.2 2.5 1.1 Conditions Ratings min typ max 1.0 10 200 GHz pF dB dB Unit µA µA
Marking : GN
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other a...