isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC5480
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Mi...
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC5480
DESCRIPTION ·High Breakdown
Voltage-
: VCBO= 1500V (Min) ·High Switching Speed ·Built-in Damper Diode ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for horizontal deflection output stage
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter
Voltage
1500
V
VEBO
Emitter-Base
Voltage
5
V
IC(peak) Collector Current-Peak
14
A
IC(surge) Collector Current-Surge
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
28
A
50
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC5480
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)EBO Emitter-Base Breakdown
Voltage
IE= 500mA; IC= 0
5
VCE(sat) Collector-Emitter Saturation
Voltage IC= 10A; IB= 2.5A
VBE(sat) Base-Emitter Saturation
Voltage
IC= 10A; IB= 2.5A
ICES
Collector Cutoff Current
VCE= 1500V; RBE= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
5
hFE-2
DC Current Gain
IC= 10A; VCE= 5V
4
tf
Fall Time
ICP= 7A, IB1= 2.4A; fH= 31.5kHz
V
5.0
V
1.5
V
500 μA
25
7
0.4 μs
NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The inform...