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2SC5457 Datasheet

Part Number 2SC5457
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description NPN Transistor
Datasheet 2SC5457 Datasheet2SC5457 Datasheet (PDF)

Power Transistors 2SC5457 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 6.5±0.1 5.3±0.1 4.35±0.1 Unit: mm 2.3±0.1 0.5±0.1 7.3±0.1 1.8±0.1 s Features 0.8max 1.0±0.2 1.0±0.1 2.5±0.1 q High-speed switching q High collector to base voltage VCBO q Wide area of safe operation (ASO) 0.93±0.1 0.1±0.05 0.5±0.1 2.3±0.1 4.6±0.1 0.75±0.1 q Satisfactory linearity of foward current transfer ratio hFE / s Absolute Maximum Ratings (TC=25˚C) 1 2 3 1:Bas.

  2SC5457   2SC5457






Part Number 2SC5457
Manufacturers Kexin
Logo Kexin
Description Silicon NPN Transistor
Datasheet 2SC5457 Datasheet2SC5457 Datasheet (PDF)

SMD Type Transistors Silicon NPN triple diffusion planar type 2SC5457 TO-252 +0.15 1.50 -0.15 Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 6.50 +0.2 5.30-0.2 +0.15 -0.15 Features +0.2 9.70 -0.2 +0.15 0.50 -0.15 High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE +0.1 0.80-0.1 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximu.

  2SC5457   2SC5457







NPN Transistor

Power Transistors 2SC5457 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 6.5±0.1 5.3±0.1 4.35±0.1 Unit: mm 2.3±0.1 0.5±0.1 7.3±0.1 1.8±0.1 s Features 0.8max 1.0±0.2 1.0±0.1 2.5±0.1 q High-speed switching q High collector to base voltage VCBO q Wide area of safe operation (ASO) 0.93±0.1 0.1±0.05 0.5±0.1 2.3±0.1 4.6±0.1 0.75±0.1 q Satisfactory linearity of foward current transfer ratio hFE / s Absolute Maximum Ratings (TC=25˚C) 1 2 3 1:Base 2:Collector 3:Emitter U Type Package e ) Parameter Symbol Ratings Unit c type Collector to base voltage VCBO 500 V n d tage. ued VCES 500 5.5±0.2 1.8 V s tin Collector to emitter voltage le on VCEO 400 V a elifecyc disc Emitter to base voltage VEBO 7 V 13.3±0.3 n u t ed, Peak collector current ICP 6 A 6.0 roduc d typ Collector current IC 3 A te tin urP tinue Basecurrent IB 1.2 A 2.3±0.1 g fo con Collector power TC=25°C win dis dissipation Ta=25°C PC 30 W 1.0 in n follo ned Junction temperature a o ludes e, pla Storage temperature Tj 150 ˚C Tstg –55 to +150 ˚C c s tinued incance typ Electrical Characteristics (TC=25˚C) M is con inten Parameter Symbol Conditions /Dis , ma Collector cutoff current D ance type Emitter cutoff current inten nce Collector to emitter voltage Ma intena Forward current transfer ratio ed ma Collector to emitter saturation voltage (plan Base to emitter saturation voltage ICBO IEBO VCEO hFE1 hFE2 VCE(sat) VBE(s.


2005-04-03 : STK4110    STK4111    STK4112    4511    4511B    FQ08E    2SC4491    2SC4492    2SC4493    2SC4495   


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