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2SC5447

Hitachi Semiconductor

NPN TRANSISTOR

2SC5447 Silicon NPN Triple Diffused Character Display Horizntal Deflection Output ADE-208-576 B (Z) 3rd. Edition Septem...


Hitachi Semiconductor

2SC5447

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2SC5447 Silicon NPN Triple Diffused Character Display Horizntal Deflection Output ADE-208-576 B (Z) 3rd. Edition September 1997 Features High breakdown voltage VCES = 1500 V High speed switching tf = 0.15 µsec (typ.) at fH = 64 kHz Isolated package TO–3PFM Outline TO–3PFM C 2 1 B 3 E 1 2 3 1. Base 2. Collector 3. Emitter 2SC5447 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at Tc = 25°C Symbol VCES VEBO IC ic(peak) PC Tj Tstg Note1 Ratings 1500 6 8 16 50 150 –55 to +150 8 Unit V V A A W °C °C A Collector to emitter diode forward current ID Electrical Characteristics (Ta = 25°C) Item Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio DC current transfer ratio Symbol V(BR)EBO ICES hFE1 hFE2 Min 6 — 5 4 — — — — — Typ — — — — — — — 0.2 0.15 Max — 500 25 6 5 1.5 2 0.4 — V V V µs µs Unit V µA Test Conditions IE = 400mA, IC = 0 VCE = 1500V, RBE = 0 VCE = 5 V, IC = 1A VCE = 5 V, IC = 5A IC = 5A, IB = 1.25A IC = 5A, IB = 1.25A IF = 8A ICP = 4A, IB1 = 1.2A fH = 31.5kHz ICP = 4A, IB1 = 1A fH = 64kHz Collector to emitter saturation VCE(sat) voltage Base to emitter saturation voltage Collector to emitter diode forward voltage Fall time Fall time VBE(sat) VECF tf tf 2 2SC5447 Main Characteristics Collector Power Dissipation vs. Temperature 80 Collector Power Dis...




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